Review of Slip Stacking in the Main Injector

Goal:

Technical Review (WBS 1.3.1.1.6)

Slip-stacking beam studies and the design of the beam-loading compensation system.

Desired outcome:

Funding of major purchases for the implementation of slip stacking in the MI

Review Committee:

Don Edwards
Brian Chase
Claudio Rivetta
Jim Steimel (Chair)

Charge:

The goal of slip stacking in MI is to increase the proton intensity to the 
antiproton target to 8E12ppp by first merging two Booster batches together 
at MI injection and then accelerating them to 120 GeV.

The biggest challenge we are facing is the beam loading compensation of the 
18 53 MHz rf stations during the slip stacking process. Recently we have 
implemented a beam loading compensation scheme (a combination of rf feedback 
and feed-forward) that allows us to slip stack up to 6E12 p with good efficiency 
and minimal longitudinal emittance blow-up.  We are currently limited by the 
available cathode rf current in each station. We plan to have a design that 
would allow us to slip stack up to 1E13 p at injection with a 40% safety factor.

The committee is asked to review and comment on:
(1) the beam loading compensation scheme used, and 
(2) the suggested hardware requirements  for the beam loading compensation 
at high intensities (up to 1E13).

Documents:

Pre-review Comments from Reviewers:

Report:

Outcome:

Project Personnel